US Patent Issued to CHONGQING ALPHA AND OMEGA SEMICONDUCTOR on March 3 for "SGT MOSFET device and manufacturing method of contact holes of SGT MOSFET device" (Chinese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,642, issued on March 3, was assigned to CHONGQING ALPHA AND OMEGA SEMICONDUCTOR Ltd. (Chongqing, China).

"SGT MOSFET device and manufacturing method of contact holes of SGT MOSFET device" was invented by Fei Peng (Chongqing, China), Yi Zhao (Chongqing, China) and Liang Shi (Chongqing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SGT MOSFET device and a manufacturing method of contact holes of the SGT MOSFET device relate to a field of power semiconductor device manufacturing. The manufacturing method includes steps of preparing a gate trench, source trenches, a shielding gate trench, and a pre-embedded ESD trench, preparing a cell structu...