US Patent Issued to CHINA ACADEMY OF SPACE TECHNOLOGY on Aug. 25 for "Method for testing total dose effect of SiC MOSFET device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,716,933, issued on Aug. 25, was assigned to CHINA ACADEMY OF SPACE TECHNOLOGY (Beijing).

"Method for testing total dose effect of SiC MOSFET device" was invented by Qingkui Yu (Beijing), He Wang (Beijing), Shuang Cao (Beijing), Yi Sun (Beijing), Bo Mei (Beijing), He Lv (Beijing), Rigen Mo (Beijing), Qianyuan Wang (Beijing), Jiajia Sun (Beijing) and Hongwei Zhang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for testing the total dose effect of a SiC MOSFET device, realizing verification of the complex total dose effect of the SiC MOSFET. The test steps sequentially comprise: testing a tested device before irradiation; performing annea...