US Patent Issued to Chengdu PBM Technology on Sept. 1 for "High-voltage blocking device, three-dimensional memory, and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,670, issued on Sept. 1, was assigned to Chengdu PBM Technology Ltd (Chengdu, China).

"High-voltage blocking device, three-dimensional memory, and preparation method thereof" was invented by Jack Zezhong Peng (Chengdu, China) and Ke Wang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a high-voltage blocking device (HVBD), a three-dimensional memory, and a preparation method thereof, relating to the technical field of three-dimensional memory manufacturing. The HVBD layer is provided with a plurality of vertical MOS through-holes; HVBDs are embedded in the HVBD layer through the corresponding vertical MOS through-holes; th...