US Patent Issued to CHENGDU PBM TECHNOLOGY on Dec. 23 for "High-density three-dimensional multilayer memory and fabrication method" (American, Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,422, issued on Dec. 23, was assigned to CHENGDU PBM TECHNOLOGY LTD. (Chengdu, China).

"High-density three-dimensional multilayer memory and fabrication method" was invented by Jack Zezhong Peng (San Jose, Calif.) and Ke Wang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a high-density three-dimensional multilayer memory and a fabrication method, and relates to the preparation technology of memories. The memory comprises an underlying circuit part and a basic structure body disposed above the underlying circuit part, wherein the basic structure body is divided into two independent interdigitated struct...