US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 9 for "Method for manufacturing gate including boy part and protruding part and gate structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,752, issued on Sept. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing gate including boy part and protruding part and gate structure" was invented by Cheng-Yeh Hsu (Hefei, China), Xiao Zhu (Hefei, China) and Xiaohong Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure and the semiconductor structure are provided. The method for manufacturing a semiconductor structure includes: providing an activated region; forming an initial gate located on the activated region; forming a first mask layer on a top surface of the initial gate, in which ...