US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 2 for "Semiconductor structure and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,322, issued on Sept. 2, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing the same" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China), Minki Hong (Hefei, China), Kyongtaek Lee (Hefei, China) and Jo-Lan Chin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a base, a dielectric layer, a gate structure, and a covering layer. The base includes discrete semiconductor pillars. The semiconductor pillars are disposed at the top of the base and extend in a vertical direction. The dielectric l...