US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 2 for "Semiconductor structure and forming method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,840, issued on Sept. 2, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and forming method thereof" was invented by Peimeng Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure and a forming method thereof. The method of forming the semiconductor structure includes: forming a capacitor base, the capacitor base including a plurality of capacitor switching structures and an isolation layer located between adjacent capacitor switching structures and covering top surfaces of the capacitor switching structures; removing the isolation layer c...