US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 2 for "Semiconductor structure and formation method thereof, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,326, issued on Sept. 2, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and formation method thereof, and memory" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a formation method. The method includes: providing a base substrate, where the base substrate includes a substrate and an insulating material layer, the substrate includes a plurality of first trenches arranged at intervals along a first direction, and the insulating material layer fills each of th...