US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 2 for "Method for fabricating array structure of columnar capacitor and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,857, issued on Sept. 2, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating array structure of columnar capacitor and semiconductor structure" was invented by Qiang Wan (Hefei, China), Kangshu Zhan (Hefei, China) and Jun Xia (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a method for fabricating an array structure of a columnar capacitor and a semiconductor structure. In the method, before a mask layer is removed, a photoresist layer is filled to adjust a thickness of the mask layer in a peripheral region and a thickness of the mask layer in an array region to be equal, thereby ...