US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 15 for "Semiconductor structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,740,043, issued on Sept. 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for forming same" was invented by Daohuan Feng (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor structure and a method for forming the same. The method for forming a semiconductor structure includes the following operations. A stack is formed on a substrate. The stack includes interlayer insulating layers and sacrifice layers alternately stacked in a first direction. The stack includes a plurality of storage regions arranged at intervals in a second direction. Part of the sacrif...