US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 1 for "Semiconductor structure and manufacturing method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,148, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and manufacturing method therefor" was invented by Meng Huang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate; a stacked structure, contact structures, and storage nodes. The stacked structure is located on the substrate and includes semiconductor layers extending in a first direction and arranged in a spaced manner in a second direction and in a third direction, wherein the first direction and the second direction are directions parallel to a plane where the substra...