US Patent Issued to ChangXin Memory Technologies on Sept. 1 for "Manufacturing method of semiconductor structure with flat isolation layer and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,213, issued on Sept. 1, was assigned to ChangXin Memory Technologies Inc. (Hefei, China).

"Manufacturing method of semiconductor structure with flat isolation layer and semiconductor structure" was invented by Tonghui Wang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure and relates to the technical field of semiconductors. The manufacturing method of a semiconductor structure includes: providing a substrate, where the substrate includes a first region and a second region, the first region includes a plurality of indepen...