US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 20 for "Semiconductor structure with vertical transistor and forming method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,458, issued on Oct. 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure with vertical transistor and forming method therefor" was invented by Xiaoguang Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structure and forming method therefor are provided. The semiconductor structure includes: substrate; first vertical transistor, including first source, first channel region located on the first source, first drain located on the first channel region, and first gate dielectric layer and first gate surrounding the first channel region; first storage structure located on the fi...