US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 20 for "Capacitor stack structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,430, issued on Oct. 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Capacitor stack structure and method for forming same" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Weiping Bai (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method for forming the capacitor stack structure includes: providing a substrate on which a plurality of first laminated structures arranged in a first direction and a first isolation structure located between every two adjacent the first laminated structures are formed, and the first laminated structure including first sem...