US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 14 for "Semiconductor device having bottom bit line and narrow channel, and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,207, issued on Oct. 14, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device having bottom bit line and narrow channel, and forming method thereof" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Yunsong Qiu (Hefei, China) and Youming Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor device and a forming method thereof. The forming method of a semiconductor device includes: providing a substrate; etching the substrate to form first recesses and second rec...