US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 3 for "Fin transistor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,332, issued on Nov. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Fin transistor structure and method for manufacturing same" was invented by Youming Liu (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a fin transistor structure includes the following: a substrate is provided, a fin part protruding from a top surface of the substrate; an isolation layer is formed on the substrate, a top surface of the isolation layer being lower than a top of the fin part, so that an upper part of the fin part is exposed above the isolation layer; and doping processing is performed on the upper...