ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,275, issued on Nov. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Anti-fuse array and memory" was invented by Dongbo Zhu (Hefei, China), Ming-Hui Huang (Hefei, China) and Tzung-Han Lee (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to an anti-fuse array and a memory. The anti-fuse array includes: a column of first active areas, where each of the first active areas includes a first channel region, a first source/drain region and a second source/drain region, and a first programming region; a column of second active areas, where each of the second active areas includes a second channel region, ...