US Patent Issued to Changxin Memory Technologies on May 5 for "Data storage circuit and control method thereof, and storage apparatus" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,422, issued on May 5, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Data storage circuit and control method thereof, and storage apparatus" was invented by Weibing Shang (Hefei, China), Hongwen Li (Hefei, China), Liang Chen (Hefei, China), Fengqin Zhang (Hefei, China), Wei Jiang (Hefei, China), Li Tang (Hefei, China), Chia-Chi Hsu (Hefei, China) and Han-Sih Ou (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a data storage circuit and a control method thereof, and a storage apparatus. The data storage circuit includes a first storage array and a sense amplifier array, the first storage array is po...