US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 13 for "Wordline driver circuit and memory" (Chinese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,354, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Wordline driver circuit and memory" was invented by Guifen Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to the field of semiconductors and provide a wordline driver circuit and a memory. The wordline driver circuit may at least include a plurality of wordline drivers. Each of the plurality of wordline drivers includes a corresponding PMOS transistor and an NMOS transistor, the plurality of PMOS transistors included in the plurality of wordline drivers are arranged side by side, and the plurality of NMOS transistors includ...