US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 13 for "Method and apparatus of controlling semiconductor manufacturing device, storage medium and semiconductor manufacturing device" (Chinese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,513, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method and apparatus of controlling semiconductor manufacturing device, storage medium and semiconductor manufacturing device" was invented by Tzu-Hsuan Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method and an apparatus of controlling a semiconductor manufacturing device, a medium and a semiconductor manufacturing device. The method of controlling a semiconductor manufacturing device includes: receiving a control instruction, and cutting off or turning on a first airflow path; and when the first airflow pa...