US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 31 for "Semiconductor structure and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,671, issued on March 31, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Kaimin Lv (Hefei, China) and Ling-Yi Chuang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a fabricating method. The semiconductor structure includes: a substrate having a power supply port; a memory module positioned on an upper surface of the substrate, where the memory module includes memory chips stacked in a first direction, the first direction is parallel to the upper surface of the substrate, each of the memory chips...