ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,448, issued on March 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Storage device" was invented by Onegyun Na (Hefei City, China) and Yusheng Pan (Hefei City, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a storage device, including: at least one first storage region, at least one drive module, and at least one amplification module. The drive module is arranged on both sides of each of the first storage regions in a word line direction, and the amplification module is arranged on both sides of each of the first storage regions in a bit line direction. Each of the first storage regions in...