US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 24 for "Semiconductor memory structure with butted contact and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,183, issued on March 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor memory structure with butted contact and method for manufacturing same" was invented by Min Li (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a substrate, and a first gate structure and a first contact structure on the substrate, the first contact structure includes a first contact part and a second contact part, the first contact part is connected to the second contact part, the first contact part is locat...