US Patent Issued to Changxin Memory Technologies on March 17 for "Semiconductor structure and manufacturing method therefor" (Chinese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,640, issued on March 17, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Semiconductor structure and manufacturing method therefor" was invented by Meng Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a bit line, a transistor structure, and a capacitor structure arranged in sequence in a first direction, the capacitor structure extending in the first direction, both the transistor structure and the capacitor structure including a portion of a semiconductor layer, and the semiconductor layer extending in the first direction; and a bit line contact layer on an end surface of th...