ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,944, issued on March 17, was assigned to Changxin Memory Technologies Inc. (Hefei, China).
"Semiconductor structure" was invented by Xusheng Liu (Hefei, China) and Jihoon Lee (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: at least one first conducting layer between a first wire and a second wire; a plurality of capacitor banks respectively located on the first wire, the second wire, or the first conducting layer, and two capacitor banks are located on each first conducting layer; a third wire is located above and connected to the first wire through a via hole, and a fourth wire is located above and ...