US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 17 for "Memory cell, memory and method for manufacturing memory" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,641, issued on March 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Memory cell, memory and method for manufacturing memory" was invented by Gongyi Wu (Hefei City, China) and Xiaoling Wang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a transistor, a storage node contact and a capacitor that are connected sequentially, wherein the capacitor includes a lower electrode, an upper electrode and a dielectric layer disposed between the lower electrode and the upper electrode. The lower electrode includes: a first electrode layer having a first sub-electrode region and a plurality of ...