US Patent Issued to ChangXin Memory Technologies on June 9 for "Method of forming semiconductor structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,025, issued on June 9, was assigned to ChangXin Memory Technologies Inc. (Hefei, China).

"Method of forming semiconductor structure and semiconductor structure" was invented by Ting Li (Hefei City, China) and Hou-Hong Chou (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure and a semiconductor structure are provided. The method of forming the semiconductor structure includes: providing a base, where the base includes a first dielectric layer and pads arranged at intervals in the first dielectric layer; forming a dielectric structure, where the dielectric structure exposes the pad and part of...