US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 23 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,598, issued on June 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and fabrication method thereof" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a method thereof. The method includes: providing a first substrate, and forming a drive pad on the first substrate; providing a second substrate, and forming active pillars and a bit line in sequence on a side of the second substrate, wherein a side of the bit line is connected to the active pillars, and a surface of the bit line facing away from the active pillars is expo...