US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 23 for "Semiconductor structure, and method for forming semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,608, issued on June 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure, and method for forming semiconductor structure" was invented by Meng Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes: a substrate; and a stack structure arranged on the substrate. The stack structure includes storage areas spaced apart from each other in a first direction, and isolation walls, each isolation wall being arranged between any two adjacent storage areas of the storage areas...