US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 23 for "Method to insulate contact plug with silicon carbon oxide and to insulate above bit line with silicon oxide by oxidating silicon carbon oxide" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,599, issued on June 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Method to insulate contact plug with silicon carbon oxide and to insulate above bit line with silicon oxide by oxidating silicon carbon oxide" was invented by Zhiyuan Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes: a substrate, bit line structures, and an isolation structure. The substrate includes multiple active areas. The bit line structures are located above the active areas, and include multiple bit lines extending in ...