US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 23 for "Method for preparing semiconductor structure, semiconductor structure and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,591, issued on June 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Method for preparing semiconductor structure, semiconductor structure and semiconductor memory" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a semiconductor structure, a semiconductor structure and a semiconductor memory are provided. The method includes: a substrate is provided; a stack structure is formed on the substrate; the stack structure is divided into multiple channel areas, first source-drain areas and second source-drain areas. Each channel area extends in a second direction, each f...