US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 28 for "Memory including zigzag bit lines and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,444, issued on July 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Memory including zigzag bit lines and method for manufacturing same" was invented by Qinghua Han (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a memory includes: providing a substrate provided with bit lines, each bit line including a plurality of straight line segments connected end to end in sequence, and adjacent straight line segments have an included angle therebetween; forming active pillars and insulating layers on the substrate, each straight line segment of each bit line being electrically connected with ...