US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 21 for "Read/write switching circuit and memory" (Chinese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,984, issued on July 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Read/write switching circuit and memory" was invented by Weibing Shang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A read/write switching circuit and a memory are provided. The read/write switching circuit includes: a first data line (Ldat) connected to a bit line (BL) through a column select module, a first complementary data line (Ldat #) connected to a complementary bit line through the column select module, a second data line (Gdat) and a second complementary data line (Gdat #), and further includes: a read/write switching module (101...