US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 20 for "Single-loop memory device, double-loop memory device, and ZQ calibration method" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,113, issued on Jan. 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Single-loop memory device, double-loop memory device, and ZQ calibration method" was invented by Kai Tian (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a single-loop memory device, a double-loop memory device, and a ZQ calibration method. The single-loop memory device includes: a master chip and a plurality of slave chips each provided with a first transmission terminal and a second transmission terminal, where the second transmission terminal of the master chip is connected to the first transmission terminal of t...