US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 20 for "Magnetic storage structure, magnetic storage array structure and control method thereof, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,667, issued on Jan. 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Magnetic storage structure, magnetic storage array structure and control method thereof, and memory" was invented by Xiaoyang Liu (Hefei, China) and Xiaoguang Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a magnetic storage structure, a magnetic storage array structure, a control method, and a memory. The magnetic storage structure includes: two magnetic tunnel junctions, each of which includes a fixed layer and a free layer; spin-orbit coupling layers in one-to-one correspondence with the two magnetic tunnel junctions, ...