US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 17 for "Method of manufacturing semiconductor structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,304, issued on Feb. 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of manufacturing semiconductor structure and semiconductor structure" was invented by Jie Bai (Hefei, China) and Kang You (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure. The method includes: providing a base; forming a plurality of support layers on the base, where the support layers are configured to support a plate capacitor structure, extend along a first direction, and are arranged at intervals along a second direction, and...