US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 17 for "Method for manufacturing semiconductor structure with active area having inverted trapezoid cross-sectional shape, and semiconductor structure with active area having inverted trapezoid cross-sectional shape" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,616, issued on Feb. 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor structure with active area having inverted trapezoid cross-sectional shape, and semiconductor structure with active area having inverted trapezoid cross-sectional shape" was invented by Yuanxi Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes operations as follows. A substrate is provided, and a mask layer is formed on the substrate. An etching process is performed to form a plurality of first trenches in the mask layer, where the first trench ...