US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 17 for "Method for forming semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,271, issued on Feb. 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming semiconductor structure and semiconductor structure" was invented by Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes that a semiconductor substrate is provided, on which bit line structures and dielectric layers that are formed, in which the bit line structures and the dielectric layers jointly define capacitor contact openings; first conductive layers filling the capacitor contact openings are formed, in which top surfaces of the first conductive layers are lowe...