US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 17 for "Method for forming semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,265, issued on Feb. 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming semiconductor structure and semiconductor structure" was invented by Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a method for forming a semiconductor structure and the semiconductor structure. The method includes: providing a base including bit line trenches extending in a first direction and arranged in a second direction; forming a bit line structure in each bit line trench; and etching the base with bit line structures formed therein to form active areas corresponding to the bit line structu...