US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 10 for "Transistor unit and array and integrated circuit thereof" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,454, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Transistor unit and array and integrated circuit thereof" was invented by Yuzhe Wang (Hefei, China) and Xin Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor unit and an array and an integrated circuit thereof are provided. The transistor unit includes: a substrate; N gates located on the substrate, a projection of the N gates on a surface of the substrate forming a closed shape; a first source region located in the substrate and a projection of the first source region on the surface of the substrate being located in the closed shape...