US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 10 for "Semiconductor structure and method for fabricating same" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,415, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Yang Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a fabricating method. The method includes: providing a substrate including a first type region and a second type region; a first insulation layer and a first initial gate structure being provided on the substrate of the first type region, and a second insulation layer and a second initial gate structure being provided on the substrate of the second type region; and simul...