US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 10 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,336, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Jiefang Deng (Hefei, China), Wei Chang (Hefei, China), Huihui Li (Hefei, China) and Xiaoguang Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including active regions arranged at intervals, where the active region includes a source, a drain, and a channel region; a word line...