US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 10 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,320, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Li Ding (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes an anti-fuse unit, and the anti-fuse unit includes a selection unit and a memory cell. The semiconductor structure further includes: a substrate; a gate provided in the substrate, where in a cross section perpendicular to the substrate, t...