US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 10 for "Semiconductor structure and manufacturing method therefor, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,618, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method therefor, and memory" was invented by Shuhao Zhang (Hefei, China) and Ning Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: multiple active areas arranged in an array along intersecting first and second directions and spaced apart by an isolation structure; a bit line select structure comprising a first gate, a second gate, a third gate and a fourth gate located on four mutually adjacent active areas, and at least one connecting line located on the isolation str...