US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 10 for "Semiconductor device and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,750, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device and fabrication method thereof" was invented by Dong Xue (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor device and a fabrication method. The fabrication method includes: providing a substrate including an alignment region and a connection region; forming a first conductive layer on the substrate; forming a spacer material layer group on the first conductive layer; forming a protective layer on the spacer material layer group, the protective layer being positioned on the alignment region; et...