US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure having void in a bit line contact structure" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,897, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure having void in a bit line contact structure" was invented by Xun Yan (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of preparing a semiconductor structure and a semiconductor structure, which relate to the field of semiconductors. The method includes: setting a top surface of a second conductive layer to be lower than a top surface of a first conductive layer; setting a top surface of a first initial bit line conductive layer to be higher than a top surface of a second initial bit l...