US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 23 for "Semiconductor structure and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,031, issued on Dec. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Songmei Shen (Hefei, China) and Junyi Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes the following operations. A support layer and a first dielectric layer that are stacked are formed on the substrate, in which first trenches are formed in the support layer and the first dielectric layer. A first blocking layer covering sidewalls and bottoms of the first trenches and a top surface of the first dielectric l...