US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 23 for "Semiconductor structure and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,396, issued on Dec. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China) and Jo-Lan Chin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate, a gate structure and a dielectric layer. Herein, the substrate includes discrete semiconductor pillars. The semiconductor pillars are arranged at the top of the substrate and extend in a vertical di...