US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 2 for "Method of manufacturing semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,421, issued on Dec. 2, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of manufacturing semiconductor structure and semiconductor structure" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor structure includes a transistor region and a step region, the transistor region includes a word line region, the word line region directly faces and is connected to the step region, and the manufacturing method includes: providing a base and forming sacrificial layers and active layers on the base; forming first isolation layers in the transistor region, wherein the first isolation lay...