US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 2 for "Anti-fuse circuit and anti-fuse unit programming state verification method" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,849, issued on Dec. 2, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Anti-fuse circuit and anti-fuse unit programming state verification method" was invented by Jiarui Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of the present disclosure provides an anti-fuse circuit, including: an anti-fuse unit; a programming circuit connected to the anti-fuse unit, and the programming circuit performs programming of the anti-fuse unit according to the programming control signal and the programming signal; the read unit reads the anti-fuse unit to obtain a data signal; the verification control unit controls ...